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NTD3813N-1G IiNkcazo zeTekhnoloji

MOSFET N-CH 16V 9.6A IPAK

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package I-Pak
Power Dissipation (Max) 1.2W (Ta), 34.9W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 4.5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 51A (Tc)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 8.75 mOhm @ 15A, 10V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 963pF @ 12V
FET Type N-Channel
Drain to Source Voltage (Vdss) 16V
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NTD3813N-1G abavelisi beempawu: AMI Semiconductor / ON Semiconductor, Bonchip isitokhwe, NTD3813N-1G ixabiso reference. NTD3813N-1G iiparamitha, NTD3813N-1G I-Datasheet PDF kunye ne-pin diagram inkcazo yokukhuphela.Ungasebenzisa i NTD3813N-1G Iziqhagamshelo eziPluggable, DSP Datesheet PDF, fumana NTD3813N-1G Umzobo wephini kunye nomzobo wesekethe kunye nendlela yokusetyenziswa komsebenzi, NTD3813N-1G electronics tutorials.Ungakhuphela kwi Bonchip.
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