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SIA413DJ-T1-GE3 IiNkcazo zeTekhnoloji

MOSFET P-CH 12V 12A SC70-6

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Package / Case PowerPAK® SC-70-6
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 57nC @ 8V
FET Feature -
Drain to Source Voltage (Vdss) 12V
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) -
Supplier Device Package PowerPAK® SC-70-6 Single
Rds On (Max) @ Id, Vgs 29 mOhm @ 6.7A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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SIA413DJ-T1-GE3 Amaxwebhu

Khuphela ugcino lwedatha kunye namaxwebhu omenzi we SIA413DJ-T1-GE3

Ezinye ziquka   "SIA41"   iinxalenye

Ezi nxalenye zilandelayo ziquka  'SIA41' 

Inxalenye # Umenzi Udidi Ubukho
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SIA411DJ-T1-GE3 Electro-Films (EFI) / Vishay Iitransistor - iiFET, iiMOSFET - enye 3509
SIA413ADJ-T1-GE3 Electro-Films (EFI) / Vishay Iitransistor - iiFET, iiMOSFET - enye 61260
SIA413DJ-T1-E3 Vishay Precision Group Ii-IC ezikhethekileyo 30
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SIA413DJ-T1-GE3 Vishay Siliconix Single MOSFETs Transistors
SIA413DJ-T1-GE3 MOS Vishay Precision Group Ii-IC ezikhethekileyo 1205
SIA413DJ-T4-GE3 VISHAY Ii-IC ezikhethekileyo 1889

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SIA413DJ-T1-GE3 abavelisi beempawu: Vishay / Siliconix, Bonchip isitokhwe, SIA413DJ-T1-GE3 ixabiso reference. SIA413DJ-T1-GE3 iiparamitha, SIA413DJ-T1-GE3 I-Datasheet PDF kunye ne-pin diagram inkcazo yokukhuphela.Ungasebenzisa i SIA413DJ-T1-GE3 Iziqhagamshelo eziPluggable, DSP Datesheet PDF, fumana SIA413DJ-T1-GE3 Umzobo wephini kunye nomzobo wesekethe kunye nendlela yokusetyenziswa komsebenzi, SIA413DJ-T1-GE3 electronics tutorials.Ungakhuphela kwi Bonchip.
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