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SI2331DS-T1-E3 IiNkcazo zeTekhnoloji

MOSFET P-CH 12V 3.2A SOT23-3

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs 48 mOhm @ 3.6A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 6V
FET Type P-Channel
Drain to Source Voltage (Vdss) 12V
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 710mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
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SI2331DS-T1-E3 abavelisi beempawu: Vishay / Siliconix, Bonchip isitokhwe, SI2331DS-T1-E3 ixabiso reference. SI2331DS-T1-E3 iiparamitha, SI2331DS-T1-E3 I-Datasheet PDF kunye ne-pin diagram inkcazo yokukhuphela.Ungasebenzisa i SI2331DS-T1-E3 Iziqhagamshelo eziPluggable, DSP Datesheet PDF, fumana SI2331DS-T1-E3 Umzobo wephini kunye nomzobo wesekethe kunye nendlela yokusetyenziswa komsebenzi, SI2331DS-T1-E3 electronics tutorials.Ungakhuphela kwi Bonchip.
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