RN2112MFV,L3F IiNkcazo zeTekhnoloji

TRANS PREBIAS PNP 50V 0.1A VESM

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Package / Case SOT-723
Part Status Active
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 5mA
Current - Collector (Ic) (Max) 100mA
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type PNP - Pre-Biased
Current - Collector Cutoff (Max) 100nA ICBO
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 k Ω
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Ezinye ziquka   "RN211"   iinxalenye

Ezi nxalenye zilandelayo ziquka  'RN211' 

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RN2110ACT Toshiba Semiconductor and Storage Ii-IC ezikhethekileyo 10376
RN2110ACT(TPL3) Toshiba Semiconductor and Storage Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2747
RN2110CT(TPL3) Toshiba Semiconductor and Storage Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2709
RN2110F Toshiba Semiconductor and Storage Ii-IC ezikhethekileyo 3700
RN2110FT TOSHIBA Ii-IC ezikhethekileyo 8410
RN2110FV TOSHIBA Ii-IC ezikhethekileyo 8000

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RN2112MFV,L3F abavelisi beempawu: Toshiba Semiconductor and Storage, Bonchip isitokhwe, RN2112MFV,L3F ixabiso reference. RN2112MFV,L3F iiparamitha, RN2112MFV,L3F I-Datasheet PDF kunye ne-pin diagram inkcazo yokukhuphela.Ungasebenzisa i RN2112MFV,L3F Iziqhagamshelo eziPluggable, DSP Datesheet PDF, fumana RN2112MFV,L3F Umzobo wephini kunye nomzobo wesekethe kunye nendlela yokusetyenziswa komsebenzi, RN2112MFV,L3F electronics tutorials.Ungakhuphela kwi Bonchip.
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