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30V NCH+NCH MIDDLE POWER MOSFET

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 21.4m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 18A
Avalanche Energy Rating (Eas) 4.6 mJ
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Part Status Active
Number of Terminations 8
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 3W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 9A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 21.4Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
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