EMH25T2R IiNkcazo zeTekhnoloji

NPN+NPN DIGITAL TRANSISTOR(WITH

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Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-F6
Operating Temperature (Max) 150°C
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7k Ω
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Packaging Digi-Reel®
JESD-609 Code e2
Part Status Active
Number of Terminations 6
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory BIP General Purpose Small Signal
Peak Reflow Temperature (Cel) 260
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Power - Max 150mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector Cutoff (Max) 500nA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 250MHz
Power Dissipation-Max (Abs) 0.15W
Resistor - Emitter Base (R2) 47k Ω
Lead Free Lead Free
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