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DTC043EUBTL IiNkcazo zeTekhnoloji

TRANS PREBIAS NPN 50V UMT3F

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 85
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
JESD-30 Code R-PDSO-F3
Number of Elements 1
Element Configuration Single
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 5mA
Max Frequency 250MHz
Max Breakdown Voltage 50V
Continuous Collector Current 100mA
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SC-85
Transistor Element Material SILICON
Published 2013
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 200mW
Terminal Form FLAT
Output Voltage 50mV
Polarity NPN
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 150mV
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA 10V
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
Lead Free Lead Free
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