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DTB123YKT146 IiNkcazo zeTekhnoloji

TRANS PREBIAS PNP 200MW SMT3

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish TIN SILVER COPPER
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Operating Supply Voltage 50V
Polarity PNP
Power Dissipation 200mW
Transistor Type PNP - Pre-Biased
Max Collector Current 500mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 56
Continuous Collector Current -500mA
Height 1.1mm
Width 1.6mm
REACH SVHC No SVHC
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.5
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Form GULL WING
Current Rating -500mA
Base Part Number DTB123
Max Output Current 500mA
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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