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NTP5860NLG IiNkcazo zeTekhnoloji

MOSFET N-CH 60V 220A TO-220-3

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 283W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10760pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 144 ns
Continuous Drain Current (ID) 220A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 660A
RoHS Status RoHS Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 283W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 220A Tc
Rise Time 58ns
Vgs (Max) ±20V
Turn-Off Delay Time 98 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
Lead Free Lead Free
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