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NTLTD7900ZR2G IiNkcazo zeTekhnoloji

MOSFET 2N-CH 20V 6A 8MICRO

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ESD PROTECTED
Voltage - Rated DC 20V
Terminal Form NO LEAD
Current Rating 9A
Base Part Number NTLTD7900Z
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation 1.5W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 26m Ω @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 16V
Rise Time 1.17ns
Turn-Off Delay Time 1.87 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 30A
FET Feature Logic Level Gate
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-VDFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.5W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Fall Time (Typ) 1.17 ns
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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NTLTD7900ZR2G Rochester Electronics, LLC MOSFETs Transistors Arrays

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