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NTD5865NLT4G IiNkcazo zeTekhnoloji

MOSFET Single N-CH 60V 40A

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 36 mJ
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 16MOhm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 52W
Turn On Delay Time 8.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 46A Tc
Rise Time 12.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
Threshold Voltage 1V
Drain to Source Breakdown Voltage 60V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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