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NTD4969N-35G IiNkcazo zeTekhnoloji

MOSFET N-CH 30V 41A IPAK-3

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 1.38W Ta 26.3W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 6.4 ns
Continuous Drain Current (ID) 12.7A
Drain Current-Max (Abs) (ID) 9.4A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 15 mJ
RoHS Status RoHS Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 26.3W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.4A Ta 41A Tc
Rise Time 27ns
Vgs (Max) ±20V
Turn-Off Delay Time 13.3 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.019Ohm
Pulsed Drain Current-Max (IDM) 150A
Radiation Hardening No
Lead Free Lead Free
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