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NTD20N06-1G IiNkcazo zeTekhnoloji

MOSFET N-CH 60V 20A IPAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~175°C TJ
Published 2007
Part Status Obsolete
Number of Terminations 3
HTS Code 8541.29.00.95
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 46m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1015pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 37.1 ns
Continuous Drain Current (ID) 20A
Drain-source On Resistance-Max 0.046Ohm
Pulsed Drain Current-Max (IDM) 60A
RoHS Status RoHS Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 20A
Pin Count 3
Qualification Status Not Qualified
Power Dissipation-Max 1.88W Ta 60W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Ta
Rise Time 60.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 27.1 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 170 mJ
Lead Free Lead Free
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