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MOSFET 2N-CH 50V 2A 8SOIC

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE
Max Power Dissipation 2W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Continuous Drain Current (ID) 2A
Drain-source On Resistance-Max 0.3Ohm
DS Breakdown Voltage-Min 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2012
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Element Configuration Dual
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Drain to Source Voltage (Vdss) 50V
Drain Current-Max (Abs) (ID) 2A
Pulsed Drain Current-Max (IDM) 10A
Avalanche Energy Rating (Eas) 300 mJ
FET Feature Logic Level Gate
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