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MOSFET N-CH 500V 2.5A IPAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 343.08mg
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 35W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Rise Time 25ns
Vgs (Max) ±30V
Turn-Off Delay Time 35 ns
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 200 mJ
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 2.5A
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
Lead Free Lead Free
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