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FJN4301RTA IiNkcazo zeTekhnoloji

Transistors Switching - Resistor Biased PNP Si Transistor Epitaxial

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight 240mg
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Polarity PNP
Power Dissipation 300mW
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -10V
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
Length 5.2mm
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Packaging Tape & Box (TB)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC -50V
Terminal Position BOTTOM
Current Rating -100mA
Base Part Number FJN4301
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
hFE Min 20
Continuous Collector Current -100mA
Height 5.33mm
Width 4.19mm
Lead Free Lead Free
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Ezinye ziquka   "FJN43"   iinxalenye

Ezi nxalenye zilandelayo ziquka  'FJN43' 

Inxalenye # Umenzi Udidi Ubukho
FJN4301RBU AMI Semiconductor / ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2704
FJN4301RBU Fairchild/ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2518
FJN4301RBU ON Semiconductor Pre-Biased BJT Transistors
FJN4301RTA Fairchild/ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2679
FJN4301RTA AMI Semiconductor / ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2715
FJN4302RBU Fairchild/ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2580
FJN4302RBU AMI Semiconductor / ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 2562
FJN4302RBU ON Semiconductor Pre-Biased BJT Transistors
FJN4302RTA AMI Semiconductor / ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 18000
FJN4302RTA Fairchild/ON Semiconductor Iitransistor - I-Bipolar (BJT) - I-Single, I-Pre-Biased 18000

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