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Power MOSFET, N-Channel, UniFETTM II, 500 V, 6.5 A, 850 mO, DPAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Rise Time 34ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 287 mJ
Length 6.73mm
Radiation Hardening No
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series UniFET-II™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850m Ω @ 3.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±25V
Turn-Off Delay Time 43 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.85Ohm
DS Breakdown Voltage-Min 500V
Height 2.39mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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Inxalenye # Umenzi Udidi Ubukho
FDD8N50NZ FSC Ii-IC ezikhethekileyo 1341
FDD8N50NZTM AMI Semiconductor / ON Semiconductor Iitransistor - iiFET, iiMOSFET - enye 48554
FDD8N50NZTM Fairchild/ON Semiconductor Iitransistor - iiFET, iiMOSFET - enye 15809

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