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FDD6780A IiNkcazo zeTekhnoloji

MOSFET N-CH 25V 16.4A DPAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 2
Resistance 8.6MOhm
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.7W Ta 32.6W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.6m Ω @ 16.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1235pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 16.4A
Drain Current-Max (Abs) (ID) 48A
Avalanche Energy Rating (Eas) 24 mJ
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 3.7W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16.4A Ta 30A Tc
Rise Time 3ns
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Height 2.39mm
Width 6.22mm
RoHS Status RoHS Compliant
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