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EMD4DXV6T5G IiNkcazo zeTekhnoloji

TRANS PREBIAS NPN/PNP SOT563

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Polarity NPN, PNP
Power Dissipation 357mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
Resistor - Base (R1) 47k Ω, 10k Ω
Resistor - Emitter Base (R2) 47k Ω
Length 1.7mm
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SOT-563, SOT-666
Number of Pins 6
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form FLAT
Current Rating 100mA
Pin Count 6
Number of Elements 2
Element Configuration Dual
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage 250mV
hFE Min 80
Continuous Collector Current 100mA
Height 600μm
Width 1.3mm
Lead Free Lead Free
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