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SI2301CDS-T1-GE3 IiNkcazo zeTekhnoloji

MOSFET P-CH 20V 3.1A SOT23-3

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs 112 mOhm @ 2.8A, 4.5V
Packaging Tape & Reel (TR)
Other Names SI2301CDS-T1-GE3TR SI2301CDST1GE3
Mounting Type Surface Mount
Manufacturer Standard Lead Time 32 Weeks
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Detailed Description P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
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