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JAN1N5807US IiNkcazo zeTekhnoloji
DIODE GEN PURP 50V 6A B-MELF
Uphawu lweMveliso | Ixabiso lophawu |
---|---|
Category | Iimveliso zeSemiconductor ezahlukeneyo / IiDiode - IiRectifier - Iinye |
Manufacturer | Microsemi |
Factory Lead Time | 3 Weeks |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
Supplier Device Package | B, SQ-MELF |
Series | Military, MIL-PRF-19500/477 |
Packaging | Bulk |
Operating Temperature - Junction | -65°C ~ 175°C |
Diode Type | Standard |
Current - Average Rectified (Io) | 6A |
Uphawu lweMveliso | Ixabiso lophawu |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Voltage - DC Reverse (Vr) (Max) | 50V |
Speed | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Package / Case | SQ-MELF, B |
Mounting Type | Surface Mount |
Current - Reverse Leakage @ Vr | 5µA @ 50V |
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
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Inxalenye # | Umenzi | Udidi | Ubukho |
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JAN1N1124 | Microsemi | Ii-IC ezikhethekileyo | 2723 |
JAN1N1124A | IR | Ii-IC ezikhethekileyo | 1452 |
JAN1N1125AR | IR | Ii-IC ezikhethekileyo | 2992 |
JAN1N1127AR | IR | Ii-IC ezikhethekileyo | 2804 |
JAN1N1183 | MOTOROLA | Ii-IC ezikhethekileyo | 2945 |
JAN1N1183A | MOTOROLA | Ii-IC ezikhethekileyo | 2712 |
JAN1N1183AR | MOTOROLA | Ii-IC ezikhethekileyo | 2927 |
JAN1N1184 | Microsemi | IiDiode - IiRectifier - Iinye | 2615 |
JAN1N1184A | MOTOROLA | Ii-IC ezikhethekileyo | 2899 |
JAN1N1186 | Microsemi | IiDiode - IiRectifier - Iinye | 2714 |
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Specialty
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