RW1C025ZPT2CR IiNkcazo zeTekhnoloji

MOSFET P-CH 20V 2.5A WEMT6

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 1mA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 65 mOhm @ 2.5A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 10V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±10V
Supplier Device Package 6-WEMT
Power Dissipation (Max) 700mW (Ta)
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 20V
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