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IPB60R360P7ATMA1 IiNkcazo zeTekhnoloji

MOSFET TO263-3

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 140µA
Technology MOSFET (Metal Oxide)
Series CoolMOS™ P7
Power Dissipation (Max) 41W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 360 mOhm @ 2.7A, 10V
Packaging Cut Tape (CT)
Other Names IPB60R360P7ATMA1CT
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
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