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IPB039N10N3GATMA1 IiNkcazo zeTekhnoloji

MOSFET N-CH 100V 160A TO263-7

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 160µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 214W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Detailed Description N-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO263-7
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 100A, 10V
Packaging Original-Reel®
Other Names IPB039N10N3 GDKR IPB039N10N3 GDKR-ND IPB039N10N3GATMA1DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
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