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SPB21N50C3ATMA1 IiNkcazo zeTekhnoloji

MOSFET N-CH 560V 21A TO-263

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 1mA
Current - Continuous Drain (Id) @ 25°C 21A Tc
Drain to Source Voltage (Vdss) 560V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.19Ohm
DS Breakdown Voltage-Min 500V
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 208W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 13.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 21A
Pulsed Drain Current-Max (IDM) 63A
Avalanche Energy Rating (Eas) 690 mJ
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