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IRGR4610DTRPBF IiNkcazo zeTekhnoloji

IGBT 600V 16A 77W DPAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 350.003213mg
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 77W
[email protected] Reflow Temperature-Max (s) 30
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Reverse Recovery Time 74 ns
Current - Collector (Ic) (Max) 16A
Max Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Current - Collector Pulsed (Icm) 18A
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2014
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) 260
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Max Collector Current 10A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.14V
Test Condition 400V, 6A, 47 Ω, 15V
Gate Charge 13nC
Td (on/off) @ 25°C 27ns/75ns
Gate-Emitter Voltage-Max 20V
RoHS Status RoHS Compliant
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