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IGBT 650V 140A 455W TO247AC

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Rise Time-Max 90ns
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 140A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 75A, 10 Ω, 15V
Gate Charge 210nC
Td (on/off) @ 25°C 50ns/200ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 80ns
REACH SVHC No SVHC
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Part Status Last Time Buy
ECCN Code EAR99
Max Power Dissipation 455W
Element Configuration Single
Power - Max 455W
Collector Emitter Voltage (VCEO) 2.1V
Reverse Recovery Time 170 ns
Collector Emitter Saturation Voltage 1.7V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Current - Collector Pulsed (Icm) 300A
Switching Energy 2.5mJ (on), 2.2mJ (off)
Gate-Emitter Thr Voltage-Max 7.7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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