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IRGIB10B60KD1P IiNkcazo zeTekhnoloji

IGBT 600V 16A 44W TO220FP

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Last Time Buy
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 44W
Number of Elements 1
Case Connection ISOLATED
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 16A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.1V
Test Condition 400V, 10A, 50 Ω, 15V
Turn Off Time-Nom (toff) 288 ns
Gate Charge 41nC
Td (on/off) @ 25°C 25ns/180ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 87ns
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.299997g
Operating Temperature -55°C~175°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 600V
Current Rating 16A
Element Configuration Single
Input Type Standard
Rise Time 24ns
Collector Emitter Voltage (VCEO) 2.1V
Reverse Recovery Time 79 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 46 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
IGBT Type NPT
Current - Collector Pulsed (Icm) 32A
Switching Energy 156μJ (on), 165μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Radiation Hardening No
Lead Free Lead Free
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