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MOSFET N-CH 200V 13A I-PAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2000
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 200V
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Tc
Rise Time 27ns
Vgs (Max) ±30V
Turn-Off Delay Time 17 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 52A
Nominal Vgs 5.5 V
Length 6.7056mm
REACH SVHC No SVHC
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 3
Resistance 235MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 13A
Qualification Status Not Qualified
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 235m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 13A
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Height 2.39mm
Width 2.3876mm
RoHS Status ROHS3 Compliant
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