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MOSFET N-CH 40V 195A TO262

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 23 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Ta
Rise Time 220ns
Vgs (Max) ±20V
Turn-Off Delay Time 90 ns
Gate to Source Voltage (Vgs) 20V
Height 9.65mm
Width 4.83mm
RoHS Status RoHS Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Obsolete
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.75m Ω @ 195A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 130 ns
Continuous Drain Current (ID) 340A
Drain to Source Breakdown Voltage 40V
Length 10.67mm
Radiation Hardening No
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