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IRFR120ZTRPBF IiNkcazo zeTekhnoloji

MOSFET N-CH 100V 8.7A DPAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 100V
Terminal Form GULL WING
Current Rating 8.7A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 35W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 8.7A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 100V
Recovery Time 36 ns
Height 2.3876mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 190MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 35W
Turn On Delay Time 8.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Rise Time 26ns
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 100V
Nominal Vgs 4 V
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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