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MOSFET N-CH 75V 195A TO-247AC

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 520W
Turn On Delay Time 43 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 220ns
Vgs (Max) ±20V
Turn-Off Delay Time 170 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 75V
Nominal Vgs 4 V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 1.85MOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.85m Ω @ 195A, 10V
Input Capacitance (Ciss) (Max) @ Vds 19230pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 260 ns
Continuous Drain Current (ID) 350A
JEDEC-95 Code TO-247AC
Drain to Source Breakdown Voltage 75V
Recovery Time 200 ns
Height 20.7mm
Width 5.3086mm
REACH SVHC No SVHC
Lead Free Lead Free
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