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IRFIZ48NPBF IiNkcazo zeTekhnoloji

MOSFET N-CH 55V 40A TO220FP

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 1996
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 40A Tc
Rise Time 78ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 40A
Avalanche Energy Rating (Eas) 270 mJ
Nominal Vgs 4 V
Length 10.6172mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 55V
Current Rating 36A
Power Dissipation-Max 54W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 22A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Recovery Time 140 ns
Height 9.8mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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