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IRFHM4234TRPBF IiNkcazo zeTekhnoloji

MOSFET N-CH 25V 20A PQFN

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Copper, Silver, Tin
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Obsolete
Number of Terminations 5
Resistance 4.4MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 7.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 25μA
Current - Continuous Drain (Id) @ 25°C 20A Ta
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5.3 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 270A
Height 900μm
Width 3.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-TQFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series FASTIRFET™, HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Power Dissipation-Max 2.8W Ta 28W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1011pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 8 ns
Threshold Voltage 1.6V
Drain Current-Max (Abs) (ID) 63A
Avalanche Energy Rating (Eas) 39 mJ
Length 3.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
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