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IRF7328TRPBF IiNkcazo zeTekhnoloji

MOSFET 2P-CH 30V 8A 8-SOIC

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -30V
Terminal Form GULL WING
Base Part Number IRF7328PBF
Row Spacing 6.3 mm
Element Configuration Dual
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 21m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2675pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 198 ns
Threshold Voltage -1V
Drain Current-Max (Abs) (ID) 8A
Dual Supply Voltage -30V
Recovery Time 56 ns
FET Feature Logic Level Gate
Height 1.75mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 21MOhm
Subcategory Other Transistors
Max Power Dissipation 2W
Current Rating -8A
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A
Rise Time 15ns
Fall Time (Typ) 98 ns
Continuous Drain Current (ID) -8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
Nominal Vgs -2.5 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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