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IPD30N06S215ATMA2 IiNkcazo zeTekhnoloji

Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 80μA
Current - Continuous Drain (Id) @ 25°C 30A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 30A
Drain-source On Resistance-Max 0.0147Ohm
Avalanche Energy Rating (Eas) 240 mJ
Lead Free Contains Lead
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 14.7m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1485pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 55V
Pulsed Drain Current-Max (IDM) 120A
RoHS Status ROHS3 Compliant
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