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IKW30N65ES5XKSA1 IiNkcazo zeTekhnoloji

Trans IGBT Chip N-CH 650V 62A 3-Pin TO-247

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Power Dissipation 188W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 62A
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 30A, 13 Ω, 15V
Turn Off Time-Nom (toff) 204 ns
Gate Charge 70nC
Td (on/off) @ 25°C 17ns/124ns
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Power - Max 188W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 650V
Reverse Recovery Time 75 ns
Turn On Time 30 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
IGBT Type Trench
Current - Collector Pulsed (Icm) 120A
Switching Energy 560μJ (on), 320μJ (off)
Lead Free Lead Free
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