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IKD06N60RFATMA1 IiNkcazo zeTekhnoloji

IGBT 600V 12A 100W PG-TO252-3

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Operating Temperature -40°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Power - Max 100W
Polarity/Channel Type N-CHANNEL
Max Collector Current 12A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 6A, 23 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 18A
Switching Energy 90μJ (on), 90μJ (off)
Gate-Emitter Thr Voltage-Max 5.7V
Lead Free Contains Lead
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Series TrenchStop®
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 100W
Reach Compliance Code not_compliant
Base Part Number *KD06N60
Input Type Standard
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 48 ns
Max Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 6A
Gate Charge 48nC
Td (on/off) @ 25°C 7ns/106ns
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
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