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IGW40N120H3FKSA1 IiNkcazo zeTekhnoloji

IGBT 1200V 80A 483W TO247-3

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 78 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 160A
Switching Energy 3.16mJ
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~175°C TJ
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 483W
Polarity/Channel Type N-CHANNEL
Current - Collector (Ic) (Max) 80A
Test Condition 600V, 40A, 12 Ω, 15V
Turn Off Time-Nom (toff) 414 ns
Gate Charge 185nC
Td (on/off) @ 25°C 30ns/290ns
RoHS Status ROHS3 Compliant
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