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BFP650H6327XTSA1 IiNkcazo zeTekhnoloji

Trans GP BJT NPN 4V 0.15A 4-Pin(3+Tab) SOT-343 T/R

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM CARBON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Form GULL WING
Base Part Number BFP650
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 4V
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA 3V
Gain 10.5dB ~ 21.5dB
Max Breakdown Voltage 4.5V
Collector Base Voltage (VCBO) 13V
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Length 2mm
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2005
Part Status Active
Number of Terminations 4
Additional Feature LOW NOISE
Terminal Position DUAL
Frequency 41GHz
Number of Elements 1
Power Dissipation 500mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 150mA
Collector Emitter Breakdown Voltage 4.5V
Transition Frequency 42000MHz
Frequency - Transition 37GHz
Emitter Base Voltage (VEBO) 1.2V
Height 900μm
Width 1.25mm
Lead Free Lead Free
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