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BFP620FH7764XTSA1 IiNkcazo zeTekhnoloji

Trans GP BJT NPN 2.3V 0.08A 4-Pin TSFP T/R

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case 4-SMD, Flat Leads
Transistor Element Material SILICON GERMANIUM
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 185mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number BFP620
Number of Elements 1
Power - Max 185mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 80mA
Collector Emitter Breakdown Voltage 2.8V
Transition Frequency 65000MHz
Frequency - Transition 65GHz
Highest Frequency Band C B
Noise Figure (dB Typ @ f) 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Lead Free Lead Free
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2005
Part Status Active
Number of Terminations 4
Additional Feature LOW NOISE, HIGH RELIABILITY
Terminal Position DUAL
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 2.3V
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 50mA 1.5V
Gain 21dB ~ 10dB
Max Breakdown Voltage 2.8V
Collector Base Voltage (VCBO) 7.5V
Collector-Base Capacitance-Max 0.2pF
RoHS Status ROHS3 Compliant
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