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AUIRL1404ZL IiNkcazo zeTekhnoloji

MOSFET N-CH 40V 160A TO262

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.7V @ 250μA
Current - Continuous Drain (Id) @ 25°C 160A Tc
Rise Time 180ns
Vgs (Max) ±16V
Turn-Off Delay Time 30 ns
Threshold Voltage 1.4V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 490 mJ
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Active
Number of Terminations 3
Resistance 5.9MOhm
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 49 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 790A
Height 9.65mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
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