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MOSFET N CH 75V 56A I-PAK

Uphawu lweMveliso Ixabiso lophawu
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2015
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Number of Channels 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 56A Tc
Rise Time 110ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 96 ns
Continuous Drain Current (ID) 80A
Drain Current-Max (Abs) (ID) 56A
DS Breakdown Voltage-Min 75V
RoHS Status RoHS Compliant
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 46A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Drain to Source Voltage (Vdss) 75V
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
Radiation Hardening No
Lead Free Lead Free
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