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MOSFET P-CH 55V 11A DPAK

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 38W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Tc
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 62 mJ
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 175m Ω @ 6.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.175Ohm
DS Breakdown Voltage-Min 55V
RoHS Status ROHS3 Compliant
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