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SIUD412ED-T1-GE3 IiNkcazo zeTekhnoloji

MOSFET N-CH 12V 500MA PWRPAK0806

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 900mV @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.25W (Ta)
Package / Case PowerPAK® 0806
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 6V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Detailed Description N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±5V
Supplier Device Package PowerPAK® 0806
Rds On (Max) @ Id, Vgs 340 mOhm @ 500mA, 4.5V
Packaging Original-Reel®
Other Names SIUD412ED-T1-GE3DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 0.71nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
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Ezinye ziquka   "SIUD4"   iinxalenye

Ezi nxalenye zilandelayo ziquka  'SIUD4' 

Inxalenye # Umenzi Udidi Ubukho
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SIUD412ED-T1-GE3 Vishay / Siliconix Iitransistor - iiFET, iiMOSFET - enye 2716
SIUD412ED-T1-GE3 Vishay Siliconix Single MOSFETs Transistors

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SIUD412ED-T1-GE3 abavelisi beempawu: Electro-Films (EFI) / Vishay, Bonchip isitokhwe, SIUD412ED-T1-GE3 ixabiso reference. SIUD412ED-T1-GE3 iiparamitha, SIUD412ED-T1-GE3 I-Datasheet PDF kunye ne-pin diagram inkcazo yokukhuphela.Ungasebenzisa i SIUD412ED-T1-GE3 Iziqhagamshelo eziPluggable, DSP Datesheet PDF, fumana SIUD412ED-T1-GE3 Umzobo wephini kunye nomzobo wesekethe kunye nendlela yokusetyenziswa komsebenzi, SIUD412ED-T1-GE3 electronics tutorials.Ungakhuphela kwi Bonchip.
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