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SI8821EDB-T2-E1 IiNkcazo zeTekhnoloji

MOSFET P-CH 30V MICRO FOOT

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.3V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 500mW (Ta)
Package / Case 4-XFBGA, CSPBGA
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package 4-Microfoot
Rds On (Max) @ Id, Vgs 135 mOhm @ 1A, 4.5V
Packaging Tape & Reel (TR)
Other Names SI8821EDB-T2-E1TR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 46 Weeks
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 15V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Detailed Description P-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot
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SI8821EDB-T2-E1 abavelisi beempawu: Electro-Films (EFI) / Vishay, Bonchip isitokhwe, SI8821EDB-T2-E1 ixabiso reference. SI8821EDB-T2-E1 iiparamitha, SI8821EDB-T2-E1 I-Datasheet PDF kunye ne-pin diagram inkcazo yokukhuphela.Ungasebenzisa i SI8821EDB-T2-E1 Iziqhagamshelo eziPluggable, DSP Datesheet PDF, fumana SI8821EDB-T2-E1 Umzobo wephini kunye nomzobo wesekethe kunye nendlela yokusetyenziswa komsebenzi, SI8821EDB-T2-E1 electronics tutorials.Ungakhuphela kwi Bonchip.
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