SI7655DN-T1-GE3 IiNkcazo zeTekhnoloji

MOSFET P-CH 20V 40A PPAK 1212

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Package / Case 8-PowerVDFN
Operating Temperature -50°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 10V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Detailed Description P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 20A, 10V
Packaging Tape & Reel (TR)
Other Names SI7655DN-T1-GE3TR SI7655DNT1GE3
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
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Ezi nxalenye zilandelayo ziquka  'SI765' 

Inxalenye # Umenzi Udidi Ubukho
SI7652DP SI Ii-IC ezikhethekileyo 53
SI7652DP P/b VISHAY Ii-IC ezikhethekileyo 6500
SI7652DP-T1-E3 VISHAY Ii-IC ezikhethekileyo 5481
SI7652DP-T1-E3 IC Vishay Precision Group Ii-IC ezikhethekileyo 1898
SI7652DP-T1-E3 P/B VISHAY Ii-IC ezikhethekileyo 6500
SI7652DP-T1-GE3 VB Ii-IC ezikhethekileyo 3000
SI7655ADN-T1-GE3 Vishay / Siliconix Iitransistor - iiFET, iiMOSFET - enye 1375
SI7655ADN-T1-GE3 Electro-Films (EFI) / Vishay Iitransistor - iiFET, iiMOSFET - enye 2853
SI7655ADN-T1-GE3 Vishay Siliconix Single MOSFETs Transistors
SI7655ADN-T1-GE3 IC Vishay Precision Group Ii-IC ezikhethekileyo 553

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