SI4447ADY-T1-GE3 IiNkcazo zeTekhnoloji

MOSFET P-CH 40V 7.2A 8SOIC

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2.5W (Ta), 4.2W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 45 mOhm @ 5A, 10V
Packaging Tape & Reel (TR)
Other Names SI4447ADY-T1-GE3-ND SI4447ADY-T1-GE3TR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 32 Weeks
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 20V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description P-Channel 40V 7.2A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SO
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SI4442DY-T1-E3 Vishay / Siliconix Iitransistor - iiFET, iiMOSFET - enye 8882765
SI4442DY-T1-E3 Electro-Films (EFI) / Vishay Iitransistor - iiFET, iiMOSFET - enye 8882765
SI4442DY-T1-E3 Vishay Siliconix Single MOSFETs Transistors
SI4442DY-T1-E3 MOS Vishay Precision Group Ii-IC ezikhethekileyo 17644

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