SI4102DY-T1-E3 IiNkcazo zeTekhnoloji

MOSFET N-CH 100V 3.8A 8-SOIC

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2.4W (Ta), 4.8W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 158 mOhm @ 2.7A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Detailed Description N-Channel 100V 3.8A (Tc) 2.4W (Ta), 4.8W (Tc) Surface Mount 8-SO
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