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MOSFET N-CH 30V 100A D2PAK

Uphawu lweMveliso Ixabiso lophawu
Category Iimveliso zeSemiconductor ezahlukeneyo / Iitransistor - iiFET, iiMOSFET - enye
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 7 mOhm @ 60A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Detailed Description N-Channel 30V 100A (Tc) 3.8W (Ta), 130W (Tc) Surface Mount D2PAK
Uphawu lweMveliso Ixabiso lophawu
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package D2PAK
Power Dissipation (Max) 3.8W (Ta), 130W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
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